The KLA-Tencor FLX-2320-S Film Stress Measurement System stress measurements films and substrates metal dielectric film cracking, voiding, and lifting formation.

Calculation of biaxial modulus of elasticity, linear expansion coefficient, stress uniformity, and file subtraction, Trend plotting for Statistical Process Control (SPC).

Calculation of water diffusion coefficient in dielectric films, recalculation of stress substrate thickness is corrected, Two- and three-dimensional views of wafer topography, measured stress-temperature curve stressed film, defects such as dislocations, voids, and cracking may occur  applications.

Aluminum stress-induced voids Passivation cracking (nitride, oxide),Stress-induced dislocations in silicon, Electrical test yield degradation, Tungsten silicide cracking.

Stress increase in oxides during temperature cycling, Constant current stress test (CCST) degradation, Matching metallization expansion on GaAs, Silicon cracking due to high film stress