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Download a FLX-2320 PDF Specifications Document
FLX-2320 PDF Specifications Document
System Specifications
Temperature Range
Standard is Room Temp to 500°C, Optional, -65°C to Room Temp
Computer-controlled forced gas cooling: Allows cooling from 500°C to 100°C in 60 minutes
(30 minutes with liquid nitrogen)
Wafer Sizes: 50 mm (optional), 75 mm, 100 mm, 125 mm, 150 mm, and 200 mm
Scan Range: User programmable up to 200 mm
Minimum Scan Step: 0.02 mm
Maximum Points per Scan: 1250
Measurement:
Speed: 6 seconds per wafer
Range: l x l07* to 4 x l010 dyne/cm2**
Repeatability (1s): 1 x l07 dyne/cm2*
Accuracy: Less than 2.5% or 1 MPa, whichever is larger*
Minimum Radius: 2.0 m*
* For typical 0.525 mm Si 100 wafer with 10,000_ film and 80 mm scan length.
* Stress upper limit increases and minimum radius of curvature decreases with shorter scan length.
Compliance:
A class IIIa laser at 670 nm with 4mW power and a Class IIIb laser at 750 nm with 4mW power.
Both lasers comply with 21CFR, Chapter 1, Subchapter J.
Computer: (minimum configurations)
Pentium 700 MHz, 128 MB RAM, 20 GB hard disk, 15” Flat Panel color monitor, and all applications software included. Applications software is based on Windows XP. Printer optional.
Physical Characteristics: (Measurement Module)
Height: 46 cm (18 in.)
Depth: 46 cm (18 in.)
Width: 56 cm (22 in.)
Weight: 45.5 kg (100 lbs.)
Shipping Weight: 72.7 kg (160 lbs.)
Power Requirements
Measurement Module: 200_240 VAC, 50/60 Hz, 13_
Computer: 115 VAC, 50/60 Hz, 5.4_
U.S. Patent Nos. 5134303, 5248889 Specifications subject to change
* For a typical 525 µm Si (100) wafer with 10,000_ film and 80 mm scan length.
** Stress upper limit increases with shorter scan length.
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