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FLX-2320-S
Stress Measurement System

 

 

Overview    Features   Specifications   Theory   Applications

FEATURES:

KLA-Tencor's patented Dual Wavelength Technology

  1. Enables the system to select the wavelength most suitable for the particular application
  2. Pre-selecting the optimal wavelength minimizes destructive interference patterns from transparent films such as silicon nitride
         

Outstanding Software

The intuitive, Windows-based analysis software displays any combination of stress, time, surface deflection, or reflected light intensity measurements.

  1. Comprehensive data analysis capabilities that include
  2. Calculating the biaxial modulus of elasticity
  3. Linear expansion coefficient
  4. Display thermal stress superimposed on stress-temperature data
  5. Stress uniformity
  6. Automatic recalculation of stress when film or substrate thickness is corrected
  7. Trend plotting for SPC (statistical process control)
  8. Calculating the water diffusion coefficient in dielectric films
  9. Two- and three-dimensional views of wafer topography
  10. Menu screens and windows that are simple and easy to use
         
Click on thumbnail for large image

Thermal Stress Analysis

  1. Laser scanning technology to accurately measure stress on all reflecting films. Measures the stress as a function of time or temperature. The software displays regular and time dependant stress measurements in graph form automatically.
  2. In-situ stress measurements from -65°C to +500°C
    • Heating rates up to 30°C per minute
    • Optional cooling allows a thorough understanding of film properties
        at temperatures from –65°C to 500°C
  3. An optional inert atmosphere capability that allows measurements to be made in a controlled atmosphere of nitrogen or argon.

Temperature Measure Recipe

FLX-ABILITY

  1. Software leveling of the sample which provides more accurate results.
  2. Only one moving element in the optical component ensures low vibration and high accuracy.
  3. Ability to customize parameters such as
       • Number of scan points
       • Elastic modulus
       • Substrate thickness
       • Wafer diameter
  4. Specify heating and cooling cycles in the recipe for stress-temperature measurements.
  5. Ability to edit data records, plot graphs, and trend charts.
  6. Automatically recalculate the stress for saved data file by changing the elastic modulus, wafer or film thickness.

PROCESS PROGRAM

BUILT-IN MATERIAL DATA BASE


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